AlGaN Template on Sapphire

Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type, , 2"diameter,Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, GaN:Si doped Production Grade

Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type, , 2"diameter,Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, GaN:Si doped Production Grade New

기본 정보
Product Name Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type, , 2"diameter,Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, GaN:Si doped Production Grade
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Product Code Al(0.1)Ga(0.9)NTsi50D(C-plane)-US
Quantity 수량증가수량감소
상품 옵션
 
  • Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), P- type,doping ,~5x1017, , 2"diameter,Norminal Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade
  •  Specifications
  • Sizes 2” Round
    Al(0.1)Ga(0.9)N thickness: 200nm+/- 20nm
    Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
    Conduction Type: N-type,
    Sapphire/GaN:Nid/GaN:Si
    Front Surface Finish (Ga Face) As-grown
    Back Surface Finish Sapphire as-received finish
    Useable Surface Area >90%
    Edge Exclusion Area 1mm
    Package Single Wafer Container
     Production Grade (For the detailed data, please click here)
  •  Related data