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Al2O3- Sapphire Wafer, C-plane (0001), 10x10x1mm, 1 SP

Al2O3- Sapphire Wafer, C-plane (0001), 10x10x1mm, 1 SP New

기본 정보
Product Name Al2O3- Sapphire Wafer, C-plane (0001), 10x10x1mm, 1 SP
Sale Price Call for Price
Product Code ALC101010S1
Quantity 수량증가수량감소
Stock 1n Stock
상품 옵션
 
  •  Features
  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
  • Wafer size
  • 10 x 10 x 1 mm thick
  • Orientation
  • <0001> +/- 0.5 o
  • Polished surface
  • substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
  • 1 sides polished
  • Package
  • Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
  •  Typical Properties
  • Crystal Structure
  • Hexagonal.  a=4.758 Angstroms  c=12.99 Angstroms,
  • Melting Point
  • 2040 degree C
  • Density
  • 3.97 gram/cm2
  • Growth Technique
  • CZ
  • crystal purity
  • >99.99 %
  • Hardness
  • 9 (mohs)
  • Thermal Expansion
  • 7.5 x 10-6  (/ oC)
  • Thermal Conductivity
  • 46.06 @ 0 oC
    25.12 @ 100 oC,
    12.56 @ 400 oC  ( W/(m.K) )
  • Dielectric Constant
  • ~ 9.4 @ 300K  at  A axis ~ 11.58 @ 300K  at  C axis
  • Loss Tangent at 10 GHz
  • < 2 x 10-5  at  A axis ,
    < 5 x 10-5  at  C axis