Melting and Casting

CZ Crystal Grower System with Vacuum Chamber for Oxide Single Crystals upto 2100ºC - EQ-SKJ-50CZ

CZ Crystal Grower System with Vacuum Chamber for Oxide Single Crystals upto 2100ºC - EQ-SKJ-50CZ

기본 정보
Product Name CZ Crystal Grower System with Vacuum Chamber for Oxide Single Crystals upto 2100ºC - EQ-SKJ-50CZ
Sale Price Call for Price
Product Code EQ-SKJ-50CZ
Quantity 수량증가수량감소
상품 옵션
 
  • EQ-SKJ-50CZ is a high quality Cubic Zirconia Crystal Growth Furnace for material research laboratories.  This furnace has been proven to be excellent for pulling various oxide crystals with melting point up to 2100 oC, including Sapphire, GGG, YAG, LaAlO3, Si, and Ge, etc. with diameter up to 3".  MTI provides technical training on installing and operating this furance to customers before shipping.  MTI also provides online video technical support worldwide.
  •  SPECIFICATIONS
  • Working Voltage
  • 240V AC,
    0.2 - 29 kHz,
    Three Phases
  • Working Current
  • 100 A
  • Max. Power Consumption
  • 25 KW
  • Melting Temperature
  • Max :  2100 °C  (3812 °F)
    Accuracy :  < +/- 0.2 °C by Euro-thermo temperature controller
  • Max. Vacuum Level
  • 10-3 torr by mechanical pump  (included)
    10-5 torr by diffusion pump  (optional)
  • Vacuum Chamber Size 
  • 500 mm (Dia.) x 700 mm (H)
  • Water Cooling
  • Water flows through chamber jacket and crystal seed rod
    Water Pressure :  0.13 - 0.18 MPa
    Water Flowrate :  60 L/minute
  • Controller
  • Electronic operation unit for controls of pulling, rotating, temperature
  • Puller 
  • Driven by constant torque DC motors
    Pulling Rate :  0.1 - 20 mm/h
    Max. Seed Rod Travel Distance :  400 mm
    Rotating Rate :  0 - 40 RPM
  • Crucible
  • Crucible Rod Raising Speed :  Manual
    Crucible Rod Max. Travel Distance :  100 mm
    Optional :  Iridium Crucible and Refractory components are available upon request at extra cost.
  • Product Dimensions
  • Crystal Growing Controller :  880 mm (L) x 1250 mm (W) x 2850 mm (H)
    Control unit :  680 mm (L) x 540 mm (W) x 1700 mm (H)
    RF Power supply :  800 (L) x 500 mm (W) x 1500 mm (H)
  • Warranty
  • One year limited warranty with life time support
  • Operation Manual
  • Application Notes
  • MTI provides free technical training of one person for two weeks in our Hefei, China facility with free housing.  The function of this equipment will be demonstrated to customer's full satisfaction before shipping it out
    MTI grew many oxide crystals via this equipment, such as Sapphire, LaAlO3, LAST, SrLaAlO3, LiAlO3 ,etc.  Technical transformation may be available at extra cost
    Please click on the picture below for details on growing Ge single crystal using this furnace
     Melting raw materials  Send crystal seed to melt
     Start pulling after
    shoulder grown
     Sapphire crystal boule
    grown by the furnace
  • Net Weight
  • 2200 kg  (4840 lbs)