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2" wafers(110)

 
  2. 2" Diameter Wafer
  3. 2" wafers(110)
 
 
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm

기본 정보
Product Name Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm
Sale Price Call for Price
Product Code GEGae50D05C1
Quantity 수량증가수량감소
상품 옵션
 
  •  Ge Wafer Specification
  • Growing Method
  • CZ
  • Orientation
  • (110) +/_0.5 Deg.
  • Wafer Size
  • 2" dia x 500 microns
  • Surface Polishing
  • one side optical polished
  • Surface finish (RMS or Ra)
  • < 30A
  • Doping
  • Ga-doped
  • Conductor type
  • P-type
  • Resistivity
  • 1 - 10 Ohms/cm
  • EPD
  • Package
  • under 1000 class clean room
  •  Typical Properties
  • Structure
  • Cubic,     a = 5.6754 A
  • Density
  • 5.323 g/cm3 at room temperature
  • Melting Point
  • 937.4 oC
  • Thermal Conductivity
  • 640
 
  

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