2" wafers(110)

Ge Wafer (110) with 3.5 degree miscut , N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.35-0.4 ohm.cm

Ge Wafer (110) with 3.5 degree miscut , N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.35-0.4 ohm.cm

기본 정보
Product Name Ge Wafer (110) with 3.5 degree miscut , N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.35-0.4 ohm.cm
Sale Price Call for Price
Product Code GESbe50D05C1R035US
Quantity 수량증가수량감소
상품 옵션
 

Specification

  •      •  Growing Method:                   CZ
  •      •  Orientation:                           (110) with 3.5 degree miscut toward <110>
         •  Flat:                                       <100>
  •      •  Wafer Size:                            2" dia x  500 microns  
  •      •  Surface finish (RMS or Ra) :   One side optical polished < 30A
  •      •  Doping:                                 Sb doped
  •      •  Conductor type:                     N-type
  •      •  Resistivity:                             0.35-0.4 ohm.cm (If you would like to measure the resistivity accurately, 
                                                          please order our Portable 4 Probe Resistivity Testing Instrument.)                           
  •      •  Package:                              under 1000 class clean room     

Typical Properties

  •      •  Structure:                         Cubic, a = 5.6754 Å
  •      •  Density:                            5.323 g/cm3 at room temperature
  •      •  Melting Point:                   937.4 oC
  •      •  Thermal Conductivity:       640