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2" wafers(110)
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm
Specification
• Growing Method: CZ • Orientation: (110) +/_0.5 Deg • Wafer Size: 2" dia x 500 microns • Surface finish (RMS or Ra) : One side optical polished < 30A
• Doping: Sb doped • Conductor type: N-type • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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