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2" wafers(110)
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm
Specification
Growing Method: CZ Orientation: (110) +/_0.5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N-type EPD: < 5E2 /cm^2 Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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Working days : Monday to Saturday
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