LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace ZnO and sapphire as optical substrate also. MTI can supply LiAlO2 wafer up to 2" diameter.
 
■   For typical properties of LiAlO2 crystal, please click here.
■   For MSDS of LiAlO2 crystal, please click here
■  For standard substrates in stock, please order from below
 
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