Ga Doped ZnO substrates

Low conductivity ZnO single crystal substrates offer several advantages for both nitride and oxide based devices in base station wireless power amplifier applications.    Low substrate defect density coupled with the isomorphic wurtzitic lattice with respect to GaN result in films that reward device manufacturers with better performance.    The semi-insulating property of the substrate prevents parasitic currents in field effect transistors.
 
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