|
|
|
|
|
|
|
|
-
CdTe doped with Zn, P type ( CZT ) (110) 10x10x 1.0mm 2 Side polished
Call for Price
-
CdS (0001) Li doped, 10x10x1.0 mm, Low resistivities: <1 ohm-cm, 2 sides polished (60/40)
Call for Price
-
CdS (0001) co-doped with Li and In, 10x10x1.0 mm, Low resistivities: <1 ohm-cm, 2 sides polished (60/40)
Call for Price
-
CdS (10-10) 10x10x1.0 mm, 2 side polished
Call for Price
-
GaAs Wafer ,(311) 2"D x0.5 mm, 1SP
Call for Price
-
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type ,As-doped , 1 side polished,R:<0.005 ohm.cm
Call for Price
-
Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.40 mm t, P type , B-doped 1 side polished
Call for Price
-
KF25 Fitting to 1/4'' Swagelok® Tube Fitting with SS Needle Valve- EQ-KF25-1/4VCR-V
Call for Price
-
Stainless steel 1/4NPS male union connector (1/4NSP male - 1/4nps male) -EQ-UC-14NPS
Call for Price
-
UV Grade Fused Silica Glass, (Corning 0F 7980 HPFS) Substrate, 100.0 mm in dia x 0.25 mm, 1 side polished
Call for Price
-
CdTe (110) , undoped, P-type 10 x 6 x 5.0 mm, 1 side polished
Call for Price
-
CdTe (110) , undoped, P-type 10 x 5.7 x 5.0 mm, 1 side polished
Call for Price
-
10 g Si (99+%, 100 nm) Nanopowder for Li ion Battery Anode - NP-Si-P100-10g
250,000
-
Compact Microwave PECVD Tube Furnace with 3"ID Quartz Tube Max.600C - VBF-1200X-MPECVD
Call for Price
-
Si-doped GaN (0001) Epitaxial Template on Sapphire N-type, 4"x 5 micron,1sp
Call for Price
-
Corning Willow Glass 152.4mm x152.4mm x 0.1mm, 2 sp surface quality 80/50 , 10pcs/Pack
Call for Price
-
High purity aluminum (Al) target, 57mm dia.x 3.0mm 4N -EQ-TGT-AL
Call for Price
-
High purity aluminum (Al) target, 47mm dia.x 3.0mm 4N -EQ-TGT-AL-1
Call for Price
-
SiC-3C Undoped Epi Film as CMP on both sides of Silicon Wafer after epitaxy growth, 1.26 micron Thick, 10x10x0.525mm
Call for Price
-
4"SiC-3C Undoped Epi Film as CMP on both sides of Silicon Wafer after epitaxy growth, 1.5 micron Thick, - SiC-3CP-4-015
Call for Price
-
4" SiC-3C N doped Epi Film as CMP on both sides of Silicon Wafer after epitaxy growth,3.3 micron Thick,-SiC-3CP-4-03
Call for Price
-
ITO Coated Glass Substrate 1" x 1" x 0.7 mm, R:9-15 ohm/sq, Nominal ITO film thickness: 180 nm
Call for Price
-
ITO Coated Glass Substrate 1" x 1" x 0.7 mm, R:12-15 ohm/sq, Nominal ITO film thickness: 115 nm+/10nm
Call for Price
-
1800°C Bench-top Vacuum* and Atmosphere Tube Furnace (82mm OD) with All UL Recognized Components - GSL-1800X-80-UL
Call for Price
-
Compact Ultra-High Temperature & High Pressure Tube Furnace (Max. 1900°C upto 35 bar )-- - GSL-2000X-25P
Call for Price
-
Pyrolytic Graphite Substrate, C axis Textured, 10x5X0.5 mm, One Side Polished
Call for Price
-
Ge Wafer (100) 4" dia x 0.5 mm, 1SP, N type ( Sb doped)- On Sale!
Call for Price
-
Ge Wafer, N-type Sb-doped (100) 3" dia x 0.5 mm 1 side polished resistivity: 0.05-0.1 ohm-cm
Call for Price
-
24" Three Zones Split Tube Furnace Modular without Tube & Flange - OTF-1200X-III-S-NT
Call for Price
-
Compact Vacuum Pressure Melting / Casting Furnace upto 1700°C and 80g
Call for Price
-
RSA 443(Al Si40) Substrate: 1"x1" x 0.5 mm, one side polished
Call for Price
-
Pyrolytic Boron Nitride ( PBN) 10x10x0.5mm, 1sp
Call for Price
-
1200°C Small Box Furnace (6"x6"x7", 4.2 liter) with 30 Segments Digital Controller - KSL-1100X-J
Call for Price
-
RSA 6061( Al Si0.5 Cu0.3 Mg1.1) Substrate: 1"x1" x 0.5 mm, one side polished
Call for Price
-
Thermolysis Recirculating Water Chiller with 9 Liters Tank, 10L / min Flow - EQ-KJ3000-110
Call for Price
-
Digital Tempeature Controlled Recirculating Water Chiller with 6 Liters Tank, 16L / min Flow - EQ-KJ5000-220
Call for Price
-
Anti-Corrosion Dry Vacuum Pump, 250 L/min, 10E-3 Torr Limit - EQ--DP250
Call for Price
-
Stainless Steel-AG5 / 13 button cell cases (7.9d x 5.4t mm) with O-rings for Battery Research - 100 pcs/pck - EQ-AG5-CASE
Call for Price
-
VGF-GaAs (100) orientation, undoped, Semi-insulating, 1sp, 3" dia x 0.45mm,Mechanical Grade
Call for Price
-
One 55 mm x 55 mm (2.17"x2.17") Gel Sticky Carrier Box -- Transparent Cover- (SP1-5510T/B-LL-P33)-,24 pcs/pack
Call for Price
-
3 Rotary Target Plasma Sputter Coater with Vacuum Pump & Three Targets ( Au, Cu, Al), 2" Max Sample - GSL-1100X-SPC16-3-220
Call for Price
-
300mm Width Pressure Controlled Electric Rolling Machine (Calender) for Battery Electrodes - MSK-HRP-E2300
Call for Price
-
Aluminum Foil for Battery Cathode Substrate (20m Length x 250mm width x 15um thickness) - EQ-bcaf-15u-250
Call for Price
-
Ultra Thin Lithium Battery Sample , 3.0V 14mAh, 29x26x 0.45mm thickness -- UTB-292640
Call for Price
-
OTF-1200X4 Four Zones Split Tube Furnace with Vacuum Flanges & 4" Dia x 83"L Quartz Tube
Call for Price
-
3600W DC Programmable Electronic load: 0-240A / 0-150V --- M9717
Call for Price
-
Computerized 2 Channel Precision Battery Analyzer for All Rechargeable Batteries up to 18V 120W - EQ-UBA5HV
Call for Price
-
Split Flat Cell PTFE Screw Sleeve Set - EQ-STC-SS
Call for Price
-
Aluminum Laminated Film for Pouch Cell Cases, 400mm W x 250 m L - EQ-alf-400
Call for Price
-
Polymer Li-Ion Battery: 3.7V 2000mAh (7.2Wh, 3.0A rate) - 4 pcs min. order - EQ-PL-565068-1.5C
Call for Price
-
1000mL Stainless Steel Bottle for Chemical Lab SSB-1000
Call for Price
-
Electric Precision 10" Width Rolling Press with Dual Micrometer - MSK-MR-250A
Call for Price
-
Compact Precision Disc Cutter with Standard 15, 19, 20 , 24mm (Optional Sizes of 10,12 or 16mm Available) Diameter Cutting Die - MSK-T-08
Call for Price
-
Vacuum Mixer with Helical Blade and 5L Water Cold Stainless Steel Tank - MSK-SFM-6
Call for Price
-
Quartz X-cut, 3" dia x 1.0mm, 2sp
Call for Price
-
SiC - 4H (0001), 2" dia. x0.33 mm th., one side polished
Call for Price
-
SiO2+Pt thin film on Si substrate ,4"x0.5mm,1sp P-type B-doped,( SiO2=500nm ,Pt=60nm)
Call for Price
-
Si Wafer (100), 4 " dia x 0.525 mm,1SP, P Type, B doped, resistivities: <0.005 ohm-cm
Call for Price
-
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:10-20 ohm-cm
Call for Price
-
Si Wafer (100), 4" dia x 0.5 mm, 1SP, Undoped with resistivities: >10000 ohm-cm
Call for Price
-
Si single crystal Substrate (100) ori, 5x5x0.5 mm, 1 sp, N-typ undoped, resistivities > 1000 ohm-cm
Call for Price
-
MgO (110) Substrate 1"x1"x0.5 mm , 1SP
Call for Price
-
MgAl2O4 (100) 0.5"x0.5"x0.5mm 1 side polished
Call for Price
-
MgAl2O4 (100) 35 mm dia x 0.5mm 2 sides polished
Call for Price
-
SrTiO3 (110) 1/4"x1/4"x0.5 mm Epi polished wafer 2 SP
Call for Price
-
Fe: SrTiO3 (100) 10x3x0.5mm, 1sp, ( Fe doped 0.05wt %)
Call for Price
-
Nb: SrTiO3 (100) 1.0% Nb, 10x5x0.5mm, 1sp
Call for Price
-
Nb: SrTiO3 (100) 0.1 % Nb, 5x5x0.5mm, 2sp
Call for Price
-
Nb: SrTiO3 (100) 0.1 % Nb, 5x5x0.5mm, 1sp
Call for Price
-
Nb: SrTiO3 (100) 0.1 % Nb, 10x10x0.5mm, 1sp
Call for Price
-
LiNbO3 optical grade, Z-cut, 2" x 0.5mm wafer, 2sp
Call for Price
-
Single crystal SrLaGaO4, (100), 5x5x0.5mm , one side polished
Call for Price
-
Single crystal SrLaGaO4, (001), 10x10x0.5mm , one side polished
Call for Price
-
Single crystal SrLaAlO4, (100), 10x10x0.5mm 2sp
Call for Price
-
PbWO4 single crystal substrate 10x5x0.5mm,fine ground
Call for Price
-
PbWO4 single crystal substrate ,random orientation, 10x10x0.5mm,2sp
Call for Price
-
MgF2, (110), 20x20x 1.0 mm 1 side polished
Call for Price
-
LiGaO2 (010 ) 5x5x0.5mm, 2sp
Call for Price
-
LaAlO3,(100) ori 10x10x 0.45mm substrate , 1 side EPI polished
Call for Price
-
InSb (111)-A 2" dia x 0.4 mm, Undoped, N type, 2sp
Call for Price
-
InSb (111)-B 2" dia x 0.45 mm, Undoped, N type, Sb- side polished
Call for Price
-
InSb (100) 2" dia x 0.45 mm, Undoped, N type, 1 side polished
Call for Price
-
InP ,Growing Method: VGF(100) Sn doped,2 " x 0.35mm, wafer, 1sp
Call for Price
-
InP (111) S doped, 2"x0.5mm wafer, 1sp
Call for Price
-
Graphene Oxide Thin Film on Glass,D=50.8 mm, thickness=1 mm
Call for Price
-
GGG, (111), 3" dia x0.4-0.5mm, 2sp
1,520,000
-
GGG, (111), 3" dia x0.5mm, 1sp
Call for Price
-
VGF-Ge Wafer (100) 4" dia x 0.5 mm, 2SP, N type ( As- doped) with Res: 0.05-0.25 ohm.cm
Call for Price
-
Ge Wafer (100) 4" dia x 0.5 mm, 1SP, N type ( Sb doped) R:1.2-1.6 ohm.cm
Call for Price
-
Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( un- doped)-On Sale!
Call for Price
-
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.113-0.12 ohm.cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.4 mm, 2SP, P type ( Ga doped), resistivities: 0.1ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 1-10 ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.013-0.017 ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivities: 0.14-0.23ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 3.97-4.46 ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.0075-0.01 ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 10-20 ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities:0.011-0.014 ohm-cm
Call for Price
-
Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type ( Sb doped), resistivities: ---0.02 ohm-cm
Call for Price
|
|
|
Working days : Monday to Saturday
|
|
|