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■ Constants, Energy Gaps, and Physical Propertiesof Semiconductor related Crystals
■ Source : Sze, S.M., Physics of Semiconductor Device, , Wiley Interscience Publication, 1981, pp. 848-849.
| Material System |
Element or Compound |
Name |
Structure1 |
Lattice Constant (A) at 300 K |
Band Gap (ev) at 300 K |
Band2 |
|---|
IV |
C |
Carbon (diamond) |
D |
3.56683 |
5.47 |
I |
| Ge |
Germanium |
D |
5.64613 |
0.66 |
I |
| Si |
Silicon |
D |
5.43095 |
1.12 |
I |
| Sn |
Grey Tin |
D |
6.48920 |
0.00 |
D |
IV-IV |
SiC |
Silicon carbide |
W |
a = 3.086,
c = 15.117 |
2.996 |
I |
III-V |
AlAs |
Aluminum arsenide |
Z |
5.6605 |
2.16 |
I |
| AlP |
Aluminum phosphide |
Z |
5.4510 |
2.45 |
|
| AlSb |
Aluminum antimonide |
Z |
6.1355 |
1.58 |
I |
| BN |
Boron nitride |
Z |
3.6150 |
~ 7.5 |
I |
| BP |
Boron phosphide |
Z |
4.5380 |
2.0 |
|
| GaAs |
Gallium arsenide |
Z |
5.6533 |
1.42 |
D |
| GaN |
Gallium nitride |
W |
a = 3.189,
c = 5.185 |
3.36 |
|
| GaP |
Gallium phosphide |
Z |
5.4512 |
2.26 |
I |
| GaSb |
Gallium antimonide |
Z |
6.0959 |
0.72 |
D |
| InAs |
Indium arsenide |
Z |
6.0584 |
0.36 |
D |
| InP |
Indium phosphide |
Z |
5.8686 |
1.35 |
D |
| InSb |
Indium antimonide |
Z |
6.4794 |
0.17 |
D |
II-VI |
CdS |
Cadmium sulfide |
Z |
5.8320 |
2.42 |
D |
| CdS |
Cadmium sulfide |
W |
a = 4.16,
c = 6.756 |
2.42 |
D |
| CdSe |
Cadmium selenide |
Z |
6.050 |
1.70 |
D |
| CdTe |
Cadmium telluride |
Z |
6.482 |
1.56 |
D |
| ZnO |
Zinc oxide |
R |
4.580 |
3.35 |
D |
| ZnS |
Zinc sulfide |
Z |
5.420 |
3.68 |
D |
| ZnS |
Zinc sulfide |
W |
a = 3.82,
c = 6.26 |
3.68 |
D |
| ZnSe |
Zinc selenide |
Z |
5.668 |
2.71 |
D |
| ZnTe |
Zinc telluride |
Z |
6.103 |
2.393 |
D |
IV-VI |
PbS |
Lead sulfide |
R |
5.9362 |
0.41 |
I |
| PbSe |
Lead selenide |
R |
6.126 |
0.27 |
I |
| PbTe |
Lead telluride |
R |
6.4620 |
0.31 |
I |
1. D = Diamond, W = Wurzite, Z = Zincblende, R = Rock Salt
2. I = Indirect, D = Direct
3. At ~ 2K.
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