Bandgap-semiconductor

■   Constants, Energy Gaps, and Physical Propertiesof Semiconductor related Crystals
■   Source : Sze, S.M., Physics of Semiconductor Device, , Wiley Interscience Publication, 1981, pp. 848-849.
Material System Element or Compound Name Structure1 Lattice Constant (A) at 300 K Band Gap (ev) at 300 K Band2

IV

C Carbon (diamond) D 3.56683 5.47 I
Ge Germanium D 5.64613 0.66 I
Si Silicon D 5.43095 1.12 I
Sn Grey Tin D 6.48920 0.00 D

IV-IV

SiC Silicon carbide W a = 3.086,
c = 15.117
2.996 I

III-V

AlAs Aluminum arsenide Z 5.6605 2.16 I
AlP Aluminum phosphide Z 5.4510 2.45  
AlSb Aluminum antimonide Z 6.1355 1.58 I
BN Boron nitride Z 3.6150 ~ 7.5 I
BP Boron phosphide Z 4.5380 2.0  
GaAs Gallium arsenide Z 5.6533 1.42 D
GaN Gallium nitride W a = 3.189,
c = 5.185
3.36  
GaP Gallium phosphide Z 5.4512 2.26 I
GaSb Gallium antimonide Z 6.0959 0.72 D
InAs Indium arsenide Z 6.0584 0.36 D
InP Indium phosphide Z 5.8686 1.35 D
InSb Indium antimonide Z 6.4794 0.17 D

II-VI

CdS Cadmium sulfide Z 5.8320 2.42 D
CdS Cadmium sulfide W a = 4.16,
c = 6.756
2.42 D
CdSe Cadmium selenide Z 6.050 1.70 D
CdTe Cadmium telluride Z 6.482 1.56 D
ZnO Zinc oxide R 4.580 3.35 D
ZnS Zinc sulfide Z 5.420 3.68 D
ZnS Zinc sulfide W a = 3.82,
c = 6.26
3.68 D
ZnSe Zinc selenide Z 5.668 2.71 D
ZnTe Zinc telluride Z 6.103 2.393 D

IV-VI

PbS Lead sulfide R 5.9362 0.41 I
PbSe Lead selenide R 6.126 0.27 I
PbTe Lead telluride R 6.4620 0.31 I
1.    D = Diamond,    W = Wurzite,    Z = Zincblende,    R = Rock Salt
2.    I = Indirect,    D = Direct
3.    At ~ 2K.
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