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Undoped Ge (100)
Ge Wafer (100) Undoped, 2" dia x 0.75 mm, 1SP, resistivities: 50.1-55.6 ohm-cm
Specification
• Growing Method: CZ • Orientation: (100) +/_0.5 Deg. • Wafer Size: 2" dia x 750 microns • Surface Polishing: one side epi polished • Surface roughness: RMS or Ra< 5 A ( by AFM) • Doping: Undoped • Conductor type: N-type • Resistivity: R:50.1-55.6 ohms/cm • EPD: • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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Working days : Monday to Saturday
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