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Diamond on Silicon Wafer
Diamond on Oxide (DOI) Wafer, 4" , 2 um Thick, 10 nm Ra
- Wafer Size
- 4" diameter x 0.5 mm
- Si wafer Orientation
- (100) +/- 0.5o
- Diamond film thickness
- 2 microns,, Oxide Layer : 1 micron
- Resistivity
- 10E3 ~ 10E4 ohm-cm
- Surface Roughness
-
as grown , RA < 10 nm
- Package
- One 1000 class clean room with 100 class plastic bag
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Working days : Monday to Saturday
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