| |
Diamond on Silicon Wafer
Electric Conductive Diamond on Insulator Wafer(DCI), 4" , 2 um Thick, 10 nm Ra
- Film
- UNCD (Ultrananocrystalline Diamond)
- Wafer Size
- 4" diameter x 0.5 mm
- Si wafer Orientation
- (100) +/- 0.5o
- Diamond film thickness
- 2 micron,B-doped Oxide Layer : 1 micron
- Surface Roughness
- as grown , RA < 10 nm
- Package
- One 1000 class clean room with 100 class plastic bag
|
|
|
Working days : Monday to Saturday
|
|
|
