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GaAs (110)
GaAs VGF Grown(110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, 1sp
- GaAs single crystal wafer
- Polishing
- One side polished
- Carrier Concentration
- N/A
- Mobility
- 3990 - 5030 cm2/V.S
- Resistivity
- (2.5 - 5.1) x 108 ohm.cm
- Ra(Average Roughness)
- < 0.4 nm
- EPI ready surface and packing
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Working days : Monday to Saturday
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