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GaP Substrates (111)
GaP Wafer, Zn-doped (111)B 2"x0.45 mm, 1sp
- GaP single crystal wafer,
- Size
- 2" diameter x 0.45 mm,
- Polished
- one side polished.
- Surface finish (RMS or Ra)
- < 8A
- Resistivity
- 4.2 E-1 ohm.cm
- Carrier Concentration
- 2.1E17 cmE-3
- Typical Physical Properties
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| Crystal Structure |
Cubic. |
| Growth Method |
CZ (LEC) |
| Density |
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| Mobility |
125 cmE2/Vs |
| Thermal Expansion |
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| Dopant |
undoped |
| Crystal growth axis |
<111> |
| Conducting Type |
N |
| Carrier Concentration |
1.4 x 106 /cm3 |
| Resistivity |
3.5 x 10E10 |
| EPD |
< 5 x 104 |
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Working days : Monday to Saturday
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