| |
GaP Substrates (111)
GaP Wafer, S doped (111) 2"x0.5 mm, 2sp
- GaP single crystal wafer,
- Size
- 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
- Edge Orientation
- (110) ±1°
- Polished
- Both sides polished.
- Surface finish (RMS or Ra)
- < 8A
- Typical Physical Properties
-
| Crystal Structure |
Cubic. a = 5.4505 Å |
| Growth Method |
CZ (LEC) |
| Density |
4.13 g/cm3 |
| Melt Point |
1480 oC |
| Thermal Expansion |
5.3 x 10-6 / oC |
| Dopant |
S doped |
undoped |
| Crystal growth axis |
<111> or <100> |
<100> or <111> |
| Conducting Type |
N |
N |
| Carrier Concentration |
2 ~ 8 x 1017 /cm3 |
4 ~ 6 x 1016 /cm3 |
| Resistivity |
~ 0.03 W-cm |
~ 0.3 W-cm |
| EPD |
< 3 x 105 |
< 3 x 105 |
|
|
|
Working days : Monday to Saturday
|
|
|
