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GaSb undoped
GaSb Wafer (100), undoped, 2"x0.45 mm ,1sp
- Size
- 2" diameter x 0.45 mm,
- Polish
- one side polished by CMP
- Packing
- 1000 class clean room in a single wafer container
- Crystal Structure
- cubic a = 6.095 Å
- Grown by a special LEC technique , EPD
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< 104/cm2.
- Carrier concentration
- (1-2) x 1017 cm-3
- Mobility
- 600 - 700 cm2/Vs
- Thermal Expansion
- 6.1 x 10 -6 /oK
- Thermal conductivity
- 270 mW / cm.k at 300 K
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| Dopant |
Type |
Carrier
Concentration
(cm-3) |
Mobility
(cm2/V.Sec) |
Resistivity
(ohm-cm) |
EPD
(cm-2) |
| Undoped |
P |
1.0 ~ 2.0 x 1017 |
600 ~ 800 |
~ 0.1 |
< 10000 |
| Zn |
P+ |
2.0 ~ 5.0 x 1018 |
300 ~ 500 |
~ 0.004 |
< 10000 |
| Te |
N |
2.0 ~ 6.0 x 1017 |
2500 ~ 3500 |
~ 0.05 |
< 10000 |
| High Resistivity |
P or N |
1.0 ~ 2.0 x 1016 |
460 |
~ 1.0 |
< 10000 |
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Working days : Monday to Saturday
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