GaSb undoped

GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished

GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished

기본 정보
Product Name GaSb Wafer (100), undoped, 2"x0.5 mm two sides polished
Sale Price Call for Price
Product Code GSUa50D05C2-US
Quantity 수량증가수량감소
상품 옵션
 
  •  Wafer Specifications
  • Size
  • 2" diameter x 0.5 mm,
  • Orientation
  • (100)
  • Dopping
  • undoped,
  • Conducting type
  • P-type.
  • Polish
  • two sides polished by CMP
  • Roughness
  • < 0.5 nm
  • Packing
  • 1000 class clean room in a single wafer container
  •  Typical Properties
  • Crystal Structure
  • cubic     a = 6.095 Å
  • Density
  • 5.619 g/cm3
  • Melting point
  • 710 oC
  • Grown by a special LEC technique , EPD
  • < 10000/cm2
  • Thermal Expansion
  • 6.1 x 10 -6 /oK
  • Thermal conductivity
  • 270 mW / cm.k     at  300 K
  • Dopant Type Carrier
    Concentration
    (cm-3)
    Mobility
    (cm2/V.Sec)
    Resistivity
    (ohm-cm)
    EPD
    (cm-2)
    Undoped P 1.0 ~ 2.0 x 1017 600 ~ 800 ~ 0.1 < 10000
    Zn P+ 2.0 ~ 5.0 x 1018 300 ~ 500 ~ 0.004 < 10000
    Te N 2.0 ~ 6.0 x 1017 2500 ~ 3500 ~ 0.05 < 10000
    High Resistivity P or N 1.0 ~ 2.0 x 1016 460 ~ 1.0 < 10000