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SiC (4H)
SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished (부가세 별도)
- Specifications of Substrate
- Orientation
- <0001> +/-0.5
- Dimension
- 1" x 0.26 +/-0.03 mm
- Polished
- One side epi polished
- Surface Roghness
- < 5 A by AFM
- Typical Properties of Single Crystal SiC
- Lattice constant
- •a = 3.07 A
•c = 10.53 A
- Stacking sequence
- ABCA (4H)
- Orientation
- on axis or 3.5o off (0001)
- Polishing
- Silicon face polished
- Band Gap
- 3.26 eV ( Indirect)
- Resistivity
- 0.015~0.5 ohm-cm
- Dielectric Constant
- •e (11) = e (22) = 9.66
•e (33) = 10.33
- Thermal Conductivity @ 300K
- 4 W / cm . K
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