AlN Epitxial Template on Silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. Epi AlN template on Silicon is a cost effective way to replace AlN single crystal substrate.
Specifications
Nominal AlN thickness
•500 nm ±10 % •one side coated
Front Surface
•< 1nm RMS •as-grown
Back surface
silicon as received
AlN orientation
(00.2)
Macro Defect Density
< 1/cm2
Wafer base
•Silicon [111] N type •2" dia x 0.5 mm •one side polished
