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AlGaN Template on Sapphire
Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type, , 2"diameter,Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, GaN:Si doped Production Grade
- Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), P- type,doping ,~5x1017, , 2"diameter,Norminal Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade
- •Sizes 2” Round
•Al(0.1)Ga(0.9)N thickness: 200nm+/- 20nm •Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o •Conduction Type: N-type, •Sapphire/GaN:Nid/GaN:Si •Front Surface Finish (Ga Face) As-grown •Back Surface Finish Sapphire as-received finish •Useable Surface Area >90% •Edge Exclusion Area 1mm •Package Single Wafer Container • Production Grade (For the detailed data, please click here)
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