Features: 

•      •  Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film
          due to less mis-matched lattice and stable chemical and physical properties
  
•      •  Wafer size: 10 mm x 10 mm  x 0.1 mm thick
  
•      •  Orientation tolerance: +/-0.5 ^o.  A plane orientation 
•      •  Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
•      •  2 sides polished
•      •  Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
•      •  Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
  
  

Typical Properties:

•      •  Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
•      •  Melting Point: 2040 degree C
•      •  Density: 3.97 gram/cm² 
•      •  Growth Technique: CZ
•      •  Crystal Purity:  >99.99%
•      •  Hardness: 9 (mohs)
•      •  Thermal Expansion: 7.5x10^-6 (/^oC)
•      •  Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
•      •  Dielectric Constant: ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis
•      •  Loss Tangent at 10 GHz: < 2x10^-5  at A axis , < 5 x10^-5  at C axis

 Please click here for detail data