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GaN Single Crystal

 
  2. Crystals Substrates: A-Z
  3. GaN
  4. GaN Single Crystal
 
 
GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP

GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP

기본 정보
Product Name GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP
Sale Price Call for Price
Product Code GaNC1010027S1US0
Quantity 수량증가수량감소
상품 옵션
 

GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.

Specifications of Substrate

  •      •  Orientation:                         c-axis (0001) +/- 1.0 o
  •      •  Nominal Thickness             270+/- 30 microns
  •      •  Dimension:                         10 mm x 10.5 mm +/- 0.5 mm
  •      •  Resistivity                            < 0.5 Ohm-cm
  •      •  Dislocation Density             < 6x10^7 cm^-2
  •      •  Macro Defect Density          <=2 cm-2
  •      •  Transmission:                      => 70%    ( click here to see transmission curve )
  •      •  Front Surface Finish            (Ga Face) , RMS <2.0 nm
  •      •  Edge Exclusion Area           1 mm
  •      •  Package Single Wafer Container or membrane box 
 
  

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