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Undoped GaN Template on SapphireGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications • Sizes 10mmx10mm x0.5mm • Substrate Sapphire, Orientation C (0001) +/- 1.0 o • Conduction Type: n-type, • Resistivity < 0.5 Ohm-cm • Front Surface Finish (Ga Face) As-grown • Back Surface Finish Sapphire as-received finish • Useable Surface Area >90% • Edge Exclusion Area 1mm • Package Single Wafer Container • GaN layer thickness 20 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area
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