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GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
Wafer Specifications
Typical Properties
- • Crystal Structure: cubic a = 6.095 Å
- • Density: 5.619 g/cm3
- • Melting point: 710 oC
- • Grown by a special LEC technique , EPD :<10^4/cm2.
- • Carrier concentration: ( 1-2)x10^17 cm^-3
- • Mobility: 600-700 cm^2/Vs
- • EPD <3000 cm^-2
- • Thermal Expansion: 6.1 x 10 -6 /oK
- • Thermal conductivity: 270 mW / cm.k at 300K
Dopant | Type | Carrier Concentration ( cm-3) | Mobility ( cm2/V.Sec) | Resistivity ( ohm-cm ) | EPD (cm-2) | Undoped | P | 1.0~2.0 x 1017 | 600 ~ 800 | ~0.1 | <10000 | Zn | P+ | 2.0~5.0 x 1018 | 300 ~ 500 | ~0.004 | <10000 | Te | N | 2.0~6.0 x 1017 | 2500 ~ 3500 | ~0.05 | <10000 | High Resistivity | P or N | 1.0~2.0 x 1016 | 460 | ~ 1.0 | <10000 |
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