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Ge square substrates (110)
Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm
Specifications
• Growing Method: CZ - • Wafer Size: 10x10x0.5 mm
• Surface Polishing: one side optical polished • Orientation: (110) +/- 0.7 degree • Surface finish (RMS or Ra) : < 30A • Doping: Sb-doped • Conductor type: N-type • Resistivity: 0.1-0.5 Ohms/cm • EPD: N/A • Package: under 1000 class clean room in wafer container
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