| |
Ge square substrates (111)
Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm
Specifications
• Growing Method: CZ - • Wafer Size: 5x5x0.5 mm
• Surface Polishing: two sides epi polished • Surface roughness: < 8 A ( by AFM) • Doping: Undoped • Conductor type: N-type • Resistivity: >50 Ohms/cm • EPD: N/A • Package: under 1000 class clean room in wafer container
|
