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Ge square substrates (111)
Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm
Specifications
• Growing Method: CZ - • Wafer Size: 10x10x0.4-0.5 mm
• Surface Polishing: two sides epi polished • Surface roughness: < 8 A ( by AFM) • Doping: Undoped • Conductor type: N-type • Resistivity: >50 Ohms/cm • EPD: N/A • Package: under 1000 class clean room in wafer container
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