| |
Ge square substrates (111)
Ge Substrate (111) 10x10x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm
Specifications
• Growing Method: CZ - • Wafer Size: 10x10x0.5 mm
• Surface Polishing: one side epi polished • Surface roughness: < 8 A ( by AFM) • Doping: Ga-doped • Conductor type: P-type • Resistivity: 0.005-0.01 Ohms/cm • EPD: N/A • Package: under 1000 class clean room in wafer container
|
