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1" Diameter Wafer
Ge Wafer ,N-type Undoped, 1" dia x 0.5 mm , 1SP(100) R:>45 Ohm.cm
Specifications
Growing Method: CZ Orientation: (100) +/_0.5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N-type Package: under 1000 class clean room
Typical Properties
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
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