| |
1" Diameter Wafer
Ge Wafer ,N-type Undoped, 30mm dia x 0.5 mm , 1SP(100) R:>40 Ohm.cm
Specifications
• Growing Method: CZ • Orientation: (100) +/_0.5 Deg. • Wafer Size: 30mm dia x 500 microns • Surface Polishing: one side epi polished • Surface roughness: RMS or Ra:~ 10 A(By AFM) • Doping: Undoped • Conductor type: N-type • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
|
|
|
Working days : Monday to Saturday
|
|
|
