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1" Diameter Wafer
Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm
Specification
• Growing Method: CZ • Orientation: (110) +/_0.5 Deg. • Wafer Size: 1" dia x 500 microns • Surface Polishing: two sides polished • Surface roughness: Ra < 10 A ( by AFM) • Doping: Undoped • Conductor type: N-type • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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