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Thermal Oxide Wafer 4" Dia.
Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 4" dia x 0.5 mm t, N type , undoped,R:>1000ohm.cm
- •Research Grade , about 80 % useful area
•SiO2 layer on 4" Silicon wafer
•Oxide layer thickness: 50 nm (500 A) +/-10%
•Growth method - Dry oxidizing at 1000oC
•Refractive index - 1.455
•Note: customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- N- type/ Un- doped
- Size
- 101 mm diameter +/- 0.5 mm x 0.5 +/- 0.025 mm
- Optional
- you may need tool below to handle the wafer ( click picture to order )
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