InP single crystal wafer
• Growing Method: VGF
• Orientation: (100)
• Size: 2" diameter x 0.35 mm
• Doping: Sn- doped
• Conducting type: S-C-N
• Polish: one side polished
• Resistivity: (2.82-2.99)x10^-3 ohm.cm
• Mobility: 2170-2220 cmE2/V.S
• EPD: <5000 /cmE2
• Carrier Concerntration: (9.62-9.99) x10^17 /cm^3
• Ra(Average Roughness) : < 0.4 nm
• EPI ready surface and packing