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InP(111)
InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating
InP single crystal wafer
- • Orientation: (111)B
- • Size: 2" diameter x 0.35mm
- • Doping: Fe doped
- • Conducting type: Semi-Insulating
- • Resistivity:(1.41-1.68)E7 ohm.cm
- • Mobility:2060-2410 cm^2/v.s
- • Polish: one side polished
- • Ra(Average Roughness) : < 0.4 nm
• EPI ready surface and packing
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Working days : Monday to Saturday
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