LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Substrate Specifcations:
• Wafer Size: 0.5'' x 0.5'' x 0.5 mm thickness +/-0.05 mm,
• Wafer Orientation: (100) +/-0.5 Deg
• Polishing: One side CMP polished with free sub-surface damaged.
• Surface finish (RMS or Ra) : < 10A
• Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.
• Warning: LaAlO3 crystal has a visible twin on a polished surface, which is normal nature .