Specifications of Substrate
- • Orientation: <0001> +/-0.5
- • Dimension: 5x5 x 0.3 +/-0.03 mm
- • Polished: One sides epi polished on Si face
- • Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- • Formula weight: 40.10
- • Unit Cell: Hexagonal
- • Lattice constant: a =3.07 A c = 10.05 A
- • Stacking sequence: ABCB (4H)
- • Growth Technique: MOCVD
- • Polishing : Silicon face polished
- • Band Gap: 3.26 eV ( Indirect)
- • Conductivity type: N
- • TTV/Bow/Warp: <=35um
- • Micropipe Density: <=30 cm^-2
- • Resistivity: 0.01~0.5 ohm-cm
- • Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- • Thermal Conductivity @ 300K: 5 W / cm . K
- • Hardness: 9 Mohs
- • Doping level of nitrogen atoms : 10^18-19 cm^-3
