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SiC (4H)
SiC - 4H (0001), 2" dia. x0.33 mm th., One side polished (부가세 별도)
Specifications of Substrate
- • Orientation: <0001> ±30′
- • Edge Orientation : <11-20>±1°<10-10>±1°
- • Dimension: 2"+/-0.15mm x 0.33 +/-0.05mm
- • Polished: one side polished
- • Surface Roughness: < 5 A by AFM
Typical Properties of Single Crystal SiC
- • Formula weight: 40.10
- • Unit Cell: Hexagonal
- • Lattice constant: a =3.07 A c = 10.53 A
- • Stacking sequence: ABCB (4H)
- • Growth Technique: MOCVD
- • Polishing: Silicon face EPI- polished
- • Band Gap: 3.26eV ( Indirect)
- • Conductivity type: N
- • TTV/Bow/Warp: <=35 um
- • Micropipe Density: <=30 cm^-2
- • Resistivity: 0.015~0.5 ohm-cm
- • Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- • Thermal Conductivity @ 300K: 4W / cm . K
- • Hardness: 9 Mohs
- • Doping level of nitrogen atoms : 10^18-19 cm^-3
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