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SiC Epi Film (3C) on Silicon Wafer
4" SiC-3C N type Film and CMP on both sides of Silicon (100) N-type Wafer after epitaxy growth, Film:1.3 micron
Specifications:
- • Film: SiC film with 3C structure grown by PECVD
- º Thickness: 1300 nm +/- 10%
- º SiC (100)
- º Surface: CMP ( film chemical mechanical polished )
- º Target doping level: 1.0E17 - 1.0E18 /cc
- º Type and dopant: N type, Nitrogen doping
- º Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
- º : 16
- • Silicon substrate:
- º Size: 100 mm dia x 0.525 mm thickness
- º Orientation: (100)
- º Type: N type / P doped
- º Resistivity: 1- 10 ohm.cm (resistivities is dependent on the doping level)
- º Polish:Both sides optical polished
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