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Si 3" P-type
Si wafer (100), 3 "dia x 0.5 mm, 1sp, P type, B doped, resistivities:0.002-0.0027ohm-cm
- Specification
- Single crystal Si
- Conductivity: P type ( B doped)
- Resistivity: 0.002-0.0027 ohm-cm
- Size: 3" diameter
- Thickness: 0.5 +/- 0.025 mm
- Orientation: (100)
- Polish: One side polished
- Surface roughness: < 5A
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Working days : Monday to Saturday
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