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Si 3" N-type Doped
Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm (부가세 별도)
- Specification
- • Single crystal Si
- • Conductivity: N type ( P doped)
- • Resistivity: 10-30ohm-CM
- • Size: 3" diameter x 0.5 mm
- • Orientation: (100) 4 Deg. Off Toward (110)
- • Polish: One side polished
- • Surface roughness: < 5A
Optional: you may need tool below to handle the wafer ( click picture to order )
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Working days : Monday to Saturday
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