Si+SiO2 +Ti( or TiO2)+Pt (111)...

SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)

SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)

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Product Name SiO2+Ti+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
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Product Code FmPt150Ti10SO300onSiBa101D05
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상품 옵션
 

    Silicon Wafer Specifications

  •      •  Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate
                     
    4"x0.525mm,1sp
    •          º  SiO2=300 nm
    •          º  Ti=10 nm
    •          º  Pt(111)=150 nm
  •      •  Resistivity: 1-20 ohm.cm (If you would like to measure the
                               resistivity accurately,

                               please order our Portable 4 Probe Resistivity Testing Instrument.) 
  •      •  Substrate Size: 4" diameter +/- 0.5 mm x 0.525 mm
  •      •  Polish:  one side polished
  •      •  Surface roughness: < 20 A RMS
  •      •  Maximum Thermal Budget of Pt/Ti film-coated SiO2/Si wafers:
           <
    650-700 C/ 1 hr in air
  •      •  Optional:  you may need tool below to handle the wafer ( click picture to order )