Graphene™ films are grown directly on a Ni/SiO2/Si deposited on an oxidized silicon wafer usinga CVD process.

Specifications:    Research Grade , about 90 % useful  area

•      •  Wafer Size: 100 mm  diameter
•      •  Growth Method:Chemical Vapor Deposition (CVD) Technique 
•      •   Film thickness:   1-10 monolayer  thick
  
  
  •          º  Graphene film is multilayer with thickness varying in the range 1-10 layers;
  •          º  Graphene layers are aligned relative to each (graphite-like A-B stacking ) other as indicated by the Raman spectrum
  •          º  The graphene is grown on Ni film by CVD process.
  •          º  Nickel film is deposited on the substrate covered by thermally grown oxide layer
  •          º  Thickness of the Ni layer is 400 nm;
  •          º  The thickness of the silicon oxide layer is 500 nm;
  •          º  The thickness of the wafer is 500 μm
  •          º  The crystallographic orientation of silicon is 100;
    
    
•      •  films are continuous with low  defect density.
•      •   Atomically thin carbon film ( 1-10 layer )
•      •  Outstanding electronic properties
•      •   Chemical inertness and stability
•      •   Unprecedented mechanical strength
  
  

Graphene film structure: three film graphene film thickness varis from 1 - 10 layer carbon

Optical microstructure picture

Ramam Spectrum