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Diamond on Silicon wafer
Electric Conductive Diamond on Insulator Wafer(DCI), 10x10 , 2 um Thick, 10 nm Ra
- Film
- UNCD (Ultrananocrystalline Diamond)
- Si wafer Orientation
- (100) +/- 0.5o
- Diamond film thickness
- 2 micron, Oxide Layer : 1 micron
- Surface Roughness
- as grown , RA < 10 nm
- Package
- One 1000 class clean room with 100 class plastic bag
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Working days : Monday to Saturday
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