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Doped GaN Template on Sapphire
Si-doped GaN (N+) Templates on Sapphire(0001) 4"Dia ,Nominal GAN Thickness 5 um,Resistivity:<0.02ohm.cm
Si- doped GaN Epitxial Template on saphhire is made by HVPE -based method.
Specifications
- • Research Grade , about 90 % usable area
- • Si- doped GaN Epitxial Template on saphhire
• GaN (0001) thin film layer thickness 5 microns +/- 1 micron
• Sizes ：4" Round
• Dimensions :100mm +/- 0.25mm
- • Conduction Type: N+
• Resistivity: <0.02 Ohm-cm
• Front surface: Ga-face, as grown
• Substrates: sapphire
- • (0001) miscut: 0.3 deg +/- 0.1 deg toward M plane
• one side polished with the condition of back surface is " as received"
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