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Doped GaN Template on Sapphire
FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp
• Research Grade , about 90 % usable area- • GaN template, N+, 2” in diameter
- • FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer )
- • FLAAT Gallium Nitride Template, N+ (Si-doped)
- • 2” in diameter, Si-doped
- • Polarity: Ga-face
- • Carrier Concentration: > 1E18/cm^3
- • Nominal GaN Thickness: 15 um +/- 10 %
- • Front side surface(after deposition and polish): Epi-ready with,
- • Ra< 0.5 nm RMS (data obtained via using a white light interferometer )
- • Back side surface: Substrate as received
- • Substrate: Sapphire, 2”, c-plane 0.20 deg offcut towards m-plane
- • SSP, 430 um
- • Backside: substrate as received
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Clcik below pic to see FLAAT structure
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