GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.
Specifications:
• Research Grade , about 90 % useful area
• Nominal GaN thickness: 0.5μm ± 0.1 μm
• Front Surface finish (Ga-face): <1nm RMS, As-grown
• Back surface finish: as received
• GaN orientation: C-plane (00.1)
• Polarity: Ga-face
• Conduction Type: Undoped (N-)
• Macro Defect Density: <5/cm^2
• Wafer base: Silicon [111], N type, P doped, Res: 1-10 ohm-cm, 2" diameter x 0.279mm, one side polished
• There is ~200nm AlN buffer layer between the silicon and GaN
