A-plane (11-20)

Al2O3 - Sapphire Wafer 10x10x0.43 mm A plane (11-20), 2 SP

Al2O3 - Sapphire Wafer 10x10x0.43 mm A plane (11-20), 2 SP

기본 정보
Product Name Al2O3 - Sapphire Wafer 10x10x0.43 mm A plane (11-20), 2 SP
Sale Price 45,800
Product Code ALA101001S243
Quantity 수량증가수량감소
상품 옵션
 

Features: 

  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
  • Wafer size: 10 mm x 10 mm  x 0.43 mm thick
  • Orientation tolerance: +/-0.5 o.  A plane orientation 
  • Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
  • 2 sides polished
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
  • Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care



    Typical Properties:

    •      •  Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
    •      •  Melting Point: 2040 degree C
    •      •  Density: 3.97 gram/cm2 
    •      •  Growth Technique: CZ
    •      •  Crystal Purity:  >99.99%
    •      •  Hardness: 9 (mohs)
    •      •  Thermal Expansion: 7.5x10-6 (/oC)
    •      •  Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
    •      •  Dielectric Constant: ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis
    •      •  Loss Tangent at 10 GHz: < 2x10-5  at A axis , < 5 x10-5  at C axis
     Please click here for detail data