| |
2" wafers(110)
Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm
Specification
• Growing Method: CZ • Orientation: (110) +/_0.5 Deg. • Wafer Size: 2" dia x 500 microns • Surface Polishing: one side optical polished • Surface finish (RMS or Ra) : < 30A • Doping: Ga-doped • Conductor type: P-type • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
|
|
|
Working days : Monday to Saturday
|
|
|
